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SIMOX:氧离子注入隔离技术 被引量:1

SIMOX.. SEPARATION BY IMPLANTATION OF OXYGEN
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摘要 过去十多年,SIMOX技术应用已得到证实。本文着重介绍了SIMOX技术及SIMOX结构的基本形成规律,论述了SIMOX技术在集成电路中,尤其是超薄层亚微米CMOS集成电路中的应用及其发展前景。 During the past ten years and more, SIMOX applications have demonstrated and steadily identified. In this paper, formation of SIMOX structure and technology were described. The trends, and applications of SIMOX technology in the VLSIC, especially in ultra-thin film sub-micrometer CMOS VLSI were also discussed.
作者 陈南翔
出处 《微细加工技术》 1991年第3期58-64,共7页 Microfabrication Technology
关键词 氧离子注入 隔离技术 SIMOX Separation by Implantation of Oxygen (SIMOX) Silicon- on-Insulator (SOI) Top silicon layer Oxygen precipitates.
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