期刊文献+

晶体硅太阳电池的氮化硅表面钝化研究 被引量:5

Investigation on Passivating Silicon Nitride Surface of Crystalline Silicon Solar Cells
下载PDF
导出
摘要 为了提高晶体硅太阳电池的光电转换效率 ,研究了用等离子增强化学气相沉积 (PECVD)的SiNx :H作为晶体硅太阳电池的表面钝化及减反射膜对电池性能的影响 ,并采用不同的工艺路线制备了不同类型的电池 .实验发现 :同SiNx :H比较 ,SiNx :H/SiO2 双层光学减反射结构对晶体硅太阳电池能起到更加有效的表面钝化作用 ,提高了太阳电池的光电转换效率 .基于界面物理 ,提出了一种新的能带模型 。 In order to improve photoelectric conversion efficiency of crystalline silicon solar cells,some effects of surface passivation quality and antireflection properties of silicon nitride prepared by plasma enhanced chemical vapour deposition on crystalline silicon solar cells are investigated. All kinds of crystalline silicon solar cells were prepared by different process methods. It was found that the silicon nitride/silicon oxide double layer optical antireflection coatings structure shows excellent passivation properties for crystalline solar cells compared to silicon nitride, so photoelectric conversion efficiency of crystalline silicon solar cells is enhanced. Based on interface physics, a new energy band model of silicon nitride/silicon oxide/silicon is presented, differences of efficiency of crystalline silicon solar cells prepared by different methodes are explained by this model.
出处 《西安交通大学学报》 EI CAS CSCD 北大核心 2002年第6期651-654,共4页 Journal of Xi'an Jiaotong University
基金 西安交通大学博士学位论文基金资助项目
关键词 太阳电池 表面纯化 SINX H 等离子增强化学气相沉积 solar cells surface passivation silicon nitride plasma enhanced chemical vapour deposition
  • 相关文献

参考文献1

二级参考文献1

共引文献3

同被引文献41

  • 1龚灿锋,杨德仁,王晓泉,席珍强,汪雷,阙端麟.氮化硅薄膜对晶体硅材料和电池的钝化效果研究[J].太阳能学报,2005,26(5):613-616. 被引量:3
  • 2龚灿锋,席珍强,王晓泉,杨德仁,阙端麟.热处理对氮化硅薄膜光学和电学性能的影响[J].太阳能学报,2006,27(3):300-303. 被引量:7
  • 3侯国付,薛俊明,孙建,郭群超,张德坤,任慧志,赵颖,耿新华,李乙钢.高压PECVD技术沉积硅基薄膜过程中硅烷状态的研究[J].物理学报,2007,56(2):1177-1181. 被引量:12
  • 4A. Rohatgi, P. Doshi, J. Moschneret al. Comprehensive Study of Rapid, Low- Cost Silicon Surface passivation Technologies [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (5): 989-991.
  • 5Armin G.. Aberle. Overview on SiN surface passivation of crystalline silicon solar cells [ J ]. Solar Energy Materials & Solar Cells, 2001, (65) : 240-243.
  • 6B. Karunagaran, S.J. Chung, S. Velumani et al. Effect of rapid thermal annealing on the properties of PECVD SiNX thin films [ J]. Materials Chemisstry and Physics, 2007, 106 : 130-133.
  • 7A. E1 amrani, I. Menous, L. Mahiou et al. Silicon nitride film for solar cells [J]. Renew Energy, 2008, doi: 10. 1016/j. rnene. 2007. 12. 015.
  • 8B. L. Sopori, X. Deng, J. P. Benner et al. Hydrogen in silicon: A discussion of diffusion and passivation mechanisms[J]. Solar Energy Materials and Solar Cells, 1996, 41/42: 159-169.
  • 9T. Lauinger, A. G. Aberle, R. Hezel et al. Proceedings of the 14^th European Photovoltaic Solar Energy Conference [ J ]. Barcelona, 1997: 853.
  • 10G. Santana, J. Fandifi o, A. Ortiz et al. Low temperature- low hydrogen content silicon nitrides thin films deposited by PECVD using dichlorosilane and ammonia mixtures [ J]. Journal of Non-Cryslline Solids, 2005, (351) : 922 -928.

引证文献5

二级引证文献7

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部