摘要
给出了高电阻率光电导体在受力情况下欧姆接触咀阻的测量技术。分别不用 Si(ρ≈3×10~4Ω·cm)及 Cr:GaAs(ρ≈10~8Ω·cm)晶体测量其铟(In)欧姆接触电阻值,并对该方法测量精度进行了分析。
A technique is discribed anew to estimate the contact resistance of an ohmiccontact,under dynamic conditions,applied to high resistivity photoconductors.It has beenused to estimate to contact resistance of an ohmic contact(In)applied to comparatively lowresistivity material Si(p=3×10~4Ω·cm)and hi gh resistivity material Cr-doped GaAs(ρ=10~8Ω·cm)respectively.The accuracy of this method has also been analysed.
出处
《应用激光》
CSCD
北大核心
1991年第3期123-125,共3页
Applied Laser
