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优良全息光折变存储材料—双掺铌酸锂晶体 被引量:4

A Series of Excellent Holographic Photorefractive Storage Materials-Doubly Doped Lithium Niobate Crystals
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摘要 我们生长与后处理了一系列双掺铌酸锂晶体 ,通过光折变存储性能的测试 ,在这些晶体中 ,我们发现了三种双掺晶体 :LN :Fe ,Mg ;LN∶Fe ,In ;LN∶Fe,Zn ,它们具有优良的光折变存储性能 ,即高衍射效率 (高达 6 0~ 80 %)、快光折变响应 (比LN∶Fe晶体缩短了一个数量级 )、和强抗光散射能力 (比LN∶Fe提高近两个数量级 )。我们还系统地研究了光强阈值效应与全息写入的关系以及全息写入与入射光强的关系 ,发现在光强阈值附近耦合强度有一最大值 ,从而提出了最佳写入光强的概念。另外 ,全息光栅热固定研究还显示 ,双掺铌酸锂晶体比单掺Fe的铌酸锂晶体具有更优良的热固定性质 :快固定时间、高固定效率、长固定寿命等。 Various doped lithium niobate crystals have been grown by Czochralski method in air.Three doubly doped lithium niobate crystals,LN∶Fe,Mg;LN∶Fe,In and LN∶Fe,Zn were found having excellent holographic photorefractive properties:a high diffraction efficiency (as high as 60-80%),a fast response speed for photorefraction (an order of magnitude faster than iron doped LiNO 3),and a high resistance to optical scattering(near two orders of magnitude larger than LN∶Fe).The relationships between light-intensity threshold effect and holographic writing and incident light-intensity were investigated.And the experimental results show there is a maximum light-signal gain near the light intensity threshold.A concept of best writing light was introduced.The other experimental results show that doubly doped lithium niobate crystals have better thermal fixing properties than mono-doped LN∶Fe crystal,that are faster fixing time,higher fixing efficiency,and longer life time.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2002年第3期310-313,共4页 Journal of Synthetic Crystals
基金 国家 8 6 3( 86 3 715 0 0 1 0 10 2 ) 973( 19990 330 0 4) 国家自然科学基金 ( 6 982 5 10 8 6 0 10 80 0 1)资助项目
关键词 全息光折变存储材料 双掺铌酸锂晶体 光折变 光存储 lithium niobate,photorefraction,optical storage
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参考文献7

  • 1Cabrera J M,et al. Advances in Physics . 1996
  • 2IBM Holographic Optical Storage Team. Laser Focus World . 2000
  • 3Sincerbox A.Creating Holographic Storage[]..1996
  • 4Psaltis D and Mok F. Scientific American . 1995
  • 5Hellemans A. Science . 1999
  • 6Buse K,Adibi A,Psaltis D. Nature . 1998
  • 7Hesselink L,et al. Science . 1998

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