摘要
本文利用悬汞电极研究了铍试剂Ⅲ存在下钒的吸附伏安行为,并对其电极过程机理作了初步的探讨.在选定条件下,钒(V)浓度在1.0×10^(-9)～4.0×10^(-7)mol·L^(-1)范围内与其峰电流呈良好的线性关系,富集5min,检测限低至2.0×10^(-10)molL^(-1).所建立的分析方法有较高的灵敏度和较强的抗干扰能力,这为实际样品中痕量钒的测定提供了可能.
The adsorptive voltammetric behaviour of Vanadium-beryllon Ⅲ complex system on the HMDE has been investigated. The mechanism of adsorptive accumulation has also been discussed. In the optimum condition, the vanadium concentration over the range of 1.0×10-9~2.0×10-7mol·L-1 is in good linear relationship with the peak current. Its detection limit is 2.0×10-10mol·L-1 after preconcentration for 5min. The method established possesses higher sensitivity and ability of anti-interference, which makes it possible to determine trace vanadium in practical samples.
关键词
钒
铍试剂Ⅲ
测定
吸附伏安法
Vanadium
Adsorptive Voltammetry
Trace analysis
