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Al/Al_2O_3陶瓷接合基板的制备及性能研究 被引量:7

Research of the Performance of A1/A1_2O_3 Substrate
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摘要 在675~825℃、氮气气氛下,使用石墨模具压铸的方法制备出Al/A12O3电子陶瓷基板,利用力学拉伸试验机测试了Al和Al2O3的结合强度,界面抗拉强度>15.94MPa,使用金相显微镜、SEM等微观分析仪器研究了其界面的微观结构. After getting rid of Al2O3 film from the surface of melting Al, Al can wet and bond Al2O3 substrate perfectly. In this work, by die-casting-bonding process, in the temperautre range of 948similar to1098K and under N-2 atmosphere, Al/Al2O3 substrates were produced successfully, The performance of Al/Al2O3 substrates was investigated by SEM and mechanic testing equipment. The bonding strength of Al/Al2O3 measured is more than 15.94MPa.
出处 《无机材料学报》 SCIE EI CAS CSCD 北大核心 2002年第4期731-736,共6页 Journal of Inorganic Materials
关键词 Al/Al2O3电子陶瓷基板 制备 性能 敷接 剥离强度 氧化铝 结构 bonding Al die-casting-bonding Al2O3 substrates
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