摘要
介绍一种超高速脉冲半导体器件,该器件属于穿通型器件,电压可达到5000V,电流上升率可以达到20kA/μs以上,根据参数调配,脉冲峰值电流可以达到数百kA。该器件采用多元胞集成结构,采用缓冲层与阳极透明层相结合的扩散技术,使其在压降和开通等方面相对于传统的晶闸管原理开关有更强的优势。并且,该超高速脉冲器件在工艺设计及实现上进行了优化,使生产条件易满足。
The super-fast pulse semiconductor device introduced in this article,is a kind of punch-through device with voltage up to 5000Vand current rise rate above 20kA/μs.Through matching with parameters,the pulse peak current can reach several hundreds of kA.The multiple-round-cell integrated structure and the diffusion technology which combines buffer layer and anode transparent layer,make the device has advantages compared with traditional thyristors in voltage drop and turn-on characteristics.This super-fast pulse semiconductor device which has been optimized on design and process technology,can meet the production condition.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2014年第4期73-76,共4页
High Power Laser and Particle Beams
关键词
脉冲功率技术
晶闸管
穿通型
缓冲层
多元胞集成结构
pulsed power technology
thyristor
punch-through
buffer layer
multiple-round-cell integrated structure
