摘要
采用数值分析方法进行模拟分析InGaN/GaN混合多量子阱中不同活性层结构对GaN基双蓝光波长发光二极管光谱的影响。结果发现只依靠改变活性层中的In0.12Ga0.88N/GaN量子阱和In0.18Ga0.82N/GaN量子阱的数量或位置,难以有效改善电子空穴在混合多量子阱中的分布和实现双蓝光均衡辐射。但随着p-AlGaN层的移去和n-AlGaN层的引入,或在量子阱引入应力补偿层AlGaN,能有效实现双蓝光平衡辐射。
The effect of different active layer structures on emission spectra of dual-blue wavelength light-emitting diodes is investigated numerically.The results show that it’s difficult to improve the distribution of electrons and holes more uniformly in the multiple quantum wells and realize the radiation balance between dual-blue light,just by changing the number or the location of In0.12Ga0.88N/ GaN QWs and In0.18Ga0.82N/GaN QWs.However,when the p-AlGaN is removed and the n-AlGaN layer is inserted below the MQWs,or the strain-compensated AlGaN layer is introduced in QWs,the spectrum stability of dual-blue emission is improved effectively.
出处
《电子与封装》
2014年第7期34-39,共6页
Electronics & Packaging
