摘要
为了提高微加速度计的噪声性能,研究了一种基于绝缘体上硅(SOI)技术的单轴MEMS加速度计的设计和加工方案。该微加速度计采用大面积质量块的电容式检测结构,通过增加检测质量,在保证灵敏度的前提下,有效地降低了微加速度计的机械布朗噪声,增强了信噪比。另外,该微加速度计采用一种基于Al保护层的MEMS SOI工艺技术制造,有利于提高微加速度计的整体精度水平。测试结果表明:微加速度计的本底噪声为20μgn/√Hz,灵敏度为2.5 V/gn。
In order to enhance noise characteristics of micro-accelerometer, design and fabrication scheme of a kind of single-axis MEMS accelerometer based on SOI technology is researched. Large-area-mass block capacitive detecting structure is used, through increasing detecting mass and under the premise that guarantee sensitivity, effectively reduce mechanical Brown noise of microaccelerometer and enhance SNR, then, the micro accelerometer is fabricated by A1 support film SOI MEMS process which favors integral precise. Test resuh show that back ground noise of microaecelerometer is 20 μgn/%/Hz,the sensitivity is 2.5 V/gn.
出处
《传感器与微系统》
CSCD
北大核心
2014年第9期88-90,93,共4页
Transducer and Microsystem Technologies
基金
国家自然科学基金资助项目(61273052)
