摘要
采用分子束外延(MBE)技术在蓝宝石衬底上依次生长n+GaN下电极层、i型AlxGa1-xN势垒层和n+GaN发射极层,并通过半导体微细加工技术,制作了AlGaN/GaN异质结单片集成紫外/红外双色探测器。该器件利用不同的探测机理,同时实现了红外光和紫外光探测,拓展了响应光谱的范围。红外光探测是通过AlGaN/GaN异质结界面自由电子吸收和功函数内部光致发射效应完成的,紫外光探测是通过AlxGa1-xN势垒层带间吸收完成的。对单元器件的暗电流特性、紫外及红外光谱特性进行了测试。测试结果表明,紫外响应截止波长356 nm,响应度180 mA/W,红外响应峰值波长14.5μm,响应度49 mA/W。
Using molecular beam epitaxy （MBE） technology, the epitaxial layer structure was grown on sapphire substrate from bottom to top as following： n＋ doped GaN bottom contact, undoped AlxGa1-xN barrier layer, n-doped GaN emitter layer. By semiconductor microfabrication technique, the monolithically integrated ultraviolet/infrared （UV/IR） dual color photodetector with A1GaN/GaN heterojunction structure was realized. The device achieves dual-color detector using different detection mechanisms, and expands the responsible spectrum. The infrared response was due to the free carrier absorption in the AlxGa1-xN/GaN heterojunction and the internal photoemission over the work function at the emitter barrier interface. The ultraviolet response was due to inter-band absorption in the AlxGa1-xN barrier region while. The dark current and both the UV and IR spectrum characteristic of the unit structure of IR/UV dual-color photodetector were measured and analyzed. The test results show that the cutoff wavelength of the UV spectrum is 356 nm and the UV responsivity is 180 mA/W. The peak wavelength of the IR spectrum and the IR responsivity is 14.5 μm and 49 mA/W, respectively.
出处
《半导体技术》
CAS
CSCD
北大核心
2014年第8期575-578,共4页
Semiconductor Technology
关键词
紫外
红外
双色探测器
异质结
ALGAN
GAN
ultraviolet
infrared
dual-color photodetector
heterojunction
A1GaN/GaN
