摘要
超结VDMOS与常规VDMOS的主要差异在于漂移区,超结VDMOS是在常规VDMOS的n型漂移区中插入了p型区。此p型区具有较大的深度与宽度比,利用一次注入与驱入工艺无法实现,所以这种超结结构的制造工艺难度比常规VDMOS大。介绍了目前实现超结结构的多次外延与注入法、多次高能离子注入法、深沟槽填p型外延法及深沟槽侧壁倾斜注入法四种主要工艺方法,重点探讨了每种方法的优缺点、制造工艺难度和适用性。对各种方法的产业化前景进行了分析,认为深沟槽填p型外延法是最适宜产业化的工艺技术。
The main difference between the super junction VDMOS and conventional VDMOS lies in the drift region of alternate heavily doped p type pillar and n type pillar. The p area has a high ratio of the depth and width,which is unable to realize by the implant and drive in process. Therefore,the super junction VDMOS is more difficult to manufacture. Four manufacturing processes of the super junction VDMOS drift region were introduced,such as the multiple epitaxial growth and implanting process,multiple high energy implanting process,p type epitaxial filling in deep trench process and tilt implanting in side wall of the deep trench process. The advantages and disadvantages,difficulty of the manufacturing process and the application scope of each process were discussed. The industrialization prospects of each process were analyzed,and the process of p type epitaxial filling in deep trench was considered to be most suitable for realizing industrialization.
出处
《半导体技术》
CAS
CSCD
北大核心
2014年第9期689-693,702,共6页
Semiconductor Technology
