摘要
利用射频(RF)磁控溅射沉积技术,采用Cu2O陶瓷靶作为溅射靶,在N2和Ar气的混合气氛下制备了Cu2O薄膜。通过改变衬底温度和N2流量,研究了RF磁控溅射沉积法对Cu2O薄膜的生长行为、物相结构、表面形貌及光学性能的影响。结果表明,衬底温度为300℃时,低N2流量(<12sccm)下沉积的薄膜结构为Cu2O和CuO的混合相,N2流量增大至12sccm时薄膜结构转变为单相的Cu2O;不同N2流量下制备的薄膜均呈现三维的结核生长模式,其表面粗糙度的均方根(RMS)值依赖于N2流量,低N2流量下薄膜表面粗糙度的RMS值随N2流量的增大而增大,高N2流量下,RMS值随N2流量的增大而减小,并在一定N2流量范围内趋于稳定;不同N2流量下制备的薄膜均在475nm附近出现发光峰,峰的相对强度随N2流量的增加而减弱,峰位随N2流量的增加出现蓝移,薄膜的光学带隙Eg约为(2.61±0.03)eV。
Cuprous oxide （Cu2O） thin films were prepared by radio frequency （RF）magnetron sputtering, using a Cu2O ceramics target in N2 and Ar mixture atmosphere. Effects of substrate temperature and N2 flow rate on growth behaviour, crystalline structure, surface morphology and optical properties of Cu2O thin films are investigated. The results show that the thin films deposited with low N2 flow rate consist of CuO and Cu2O phases. When the N2 flow rate increases to 12 sccm,the thin films deposited at 300℃ are single phase Cu2O. All thin films deposited under different N2 now rates are characteristics of 3D growth. The root mean square （RMS） of surface roughness of thin films depends on N2flow rates, the RMS of surface roughness increases with the increasing of N2 flow rates under low N2 flow rate, while decreases with the increasing of N2 flow rates under high N2flow rate. Moreover,all thin films deposited under different N2 flow rates have a photoluminescence （PL） emission at ~475 nm, corresponding to the optical band gap （Eg） ^（2. 6±0. 03） eV,the emission intensity of peak decreases with the increasing of N2 flow rates,and the peak positions show blue shifts with the increasing of N2 flow rates.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2014年第9期1727-1731,共5页
Journal of Optoelectronics·Laser
基金
国家自然科学基金联合资助基金(U1037604)资助项目
