摘要
提出一种基于二次规划的光刻机光源优化方法。采用空间像与目标像的图形误差为目标函数,根据空间像强度与不同位置的点光源之间的线性关系,将光源优化转换成二次规划问题。将掩模图形区域分成限制区域和比较区域,对限制区域应用约束条件,对比较区域采用目标函数优化。采用一维孤立空图形和二维接触孔阵列图形对该方法进行验证,分析光刻胶阈值和离焦量对优化结果的影响。仿真表明,提出的光源优化方法获得了光源的全局最优解,提高了光刻成像质量,增大了工艺窗口。
In this paper, we propose a source optimization method of lithography tools based on quadratic programming. The fidelity of the aerial image to the mask object pattern is designed as the object function. Then by using the linear relationship between the aerial image and point sources, the source optimization is transformed to a quadratic programming problem. The mask object pattern is divided into a limitation area and a comparison area. The constraint condition is applied in the limitation area and the object function is applied in the comparison area. The one-dimensional （1D） isolated space and two-dimensional （2D） contact hole array patterns are used to validate our method. The impacts of the threshold and focus on the optimization results are studied. According to the simulation results, the global optimization source is obtained by using the proposed method. The image quality is improved and the process window is increased after the source optimization.
出处
《光学学报》
EI
CAS
CSCD
北大核心
2014年第10期249-256,共8页
Acta Optica Sinica
基金
国家自然科学基金(61275207
61205102)
关键词
光学设计
光刻
分辨率增强
光源掩模优化
光源优化
二次规划
全局最优解
optical design
lithography
resolution enhancement
source mask optimization
source optimization
quadratic programming
global convergence
