摘要
A model predicting the behavior of various parameters, such as 2DEG sheet charge density and thresh- old voltage, with the variation of barrier thickness and oxide thickness considering interface density of states is presented. The mathematical dependence of these parameters is derived in conjunction with the interface density of states. The dependence of sheet charge density with the barrier thickness and with the oxide thickness is plotted and an insight into the barrier scaling properties of AIInN based MOSHEMTs is presented. The threshold voltage is also plotted with respect to barrier thickness and oxide thickness, which reveals the possibility of the enhance- ment mode operation of the device at low values of the interface DOS. The results are in good agreement with the fabricated device available in the literature.
A model predicting the behavior of various parameters, such as 2DEG sheet charge density and thresh- old voltage, with the variation of barrier thickness and oxide thickness considering interface density of states is presented. The mathematical dependence of these parameters is derived in conjunction with the interface density of states. The dependence of sheet charge density with the barrier thickness and with the oxide thickness is plotted and an insight into the barrier scaling properties of AIInN based MOSHEMTs is presented. The threshold voltage is also plotted with respect to barrier thickness and oxide thickness, which reveals the possibility of the enhance- ment mode operation of the device at low values of the interface DOS. The results are in good agreement with the fabricated device available in the literature.
