摘要
在薄膜集成电路的制作工艺中,沉积电阻材料制作高精度、高稳定性的埋嵌薄膜电阻是一项关键技术,TaN由于具有良好的电阻范围和较高的可靠性而被广泛应用于薄膜电路中制作埋嵌电阻。研究了通过反应磁控溅射技术制备TaN薄膜电阻,并通过均匀性挡板改善薄膜的均匀性,获得了高均匀性TaN薄膜电阻。分析了氮气流量比,沉积扫描速率等工艺参数对TaN薄膜电阻性能的影响,讨论TaN薄膜电阻最佳的制备工艺。
The preparation of thin film embedded resistors with high precision and superior stability in the thin film circuit is very important.TaN has been extensively used as embedded resistors due to its favorable properties,such as wide-range resistance and excellent reliability.In this paper,the TaN thin films are prepared by reactive magnetron sputtering and the film uniformity is improved with the baffle.The effects of N2 flow rates and thin film deposition scanning rates on the properties of TaN thin film embedded resistors are studied.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2014年第5期498-502,共5页
Research & Progress of SSE
关键词
薄膜电路
氮化钽薄膜
方阻
thin film circuit
tantalum nitride（TaN）thin film
sheet resistance
