摘要
利用固相反应法制备了富铟含量在不同成分配比下的高质量InGaZnO陶瓷靶材,采用脉冲激光沉积法,在基片温度为20℃、氧压为1Pa条件下,在石英玻璃衬底上生长了非晶InGaZnO薄膜,并对薄膜进行X射线衍射、透射吸收光谱、拉曼光谱与霍尔效应测试。通过对InGaZnO薄膜的测试表征,在较低温度条件下,铟含量较高的薄膜样品保持了非晶结构、可见光的高透明性和高电子迁移率,InGaZnO薄膜有望应用于电子器件。
InGaZnO ceramic target was obtained by solid state reactions in atmospheric pressure. Pulsed laser deposition method was applied to growing amorphous InGaZnO films on the quartz glass at room temperature under 1Pa oxygen pressure. The film properties were carefully examined using X ray diffraction （XRD）, transmission spectra, Raman spectra and Hall effect measurement. InGaZnO thin films were amorphous structure and with high quality. The transmitted spectrum shows that thin films exhibit perfect light transmission and narrow band gap. The InGaZnO film contains amorphous structure, perfect light transmission and high carrier mobility at low deposition temperature with inch indium content. These amorphous IGZO thin films with high mobility and transparency are highly desirable for device fabrication on flexible substrates.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2014年第12期49-52,共4页
High Power Laser and Particle Beams
基金
北京市教育委员会2011年度科技计划重点项目
北京市人才强教深化计划-北京工业大学高层次人才引进及实施项目
