摘要
为了分析PDP列驱动芯片的能量恢复效率,提出了2种分析模型。DPLD(double-channel p-type lateral extended drain MOS)管是列驱动芯片中能量恢复电路的核心元器件。CRC(电容-电阻-电容)等效电路模型适用于漏电流能力较弱的DPLD管;VCCS(压控电流源)模型适用于漏电流能力较强的DPLD管;测试结果显示CRC和VCCS模型都具备较高的精度,模型误差分别是2.26%和4.04%。CRC模型揭示了影响列驱动芯片能量恢复效率的因素有3个,分别是:充电时间、沟道电阻、负载电容。2种模型分析的对比结果表明,沟道电阻对列驱动芯片的能量恢复效率影响很大,使用较小沟道电阻的DPLD管可以显著提高PDP列驱动芯片的能量恢复效率。CRC和VCCS模型可用于精确预测列驱动芯片的能量恢复效率。
Two analytical models are proposed to analyze the energy recovery efficiency of PDP data driver IC.DPLD（double-channel p-type lateral extended drain MOS）transistor is the key device of energy recovery circuit of data driver IC.CRC（Capacitor Resistor and Capacitor）equivalent circuit model is suitable for DPLD transistor which has poor drain current capacity.VCCS（Voltage Controlled Current Source）model is suitable for DPLD transistor which has strong drain current capacity.The test results reveal that both CRC and VCCS models have high precision,the model errors are2.26%and 4.04%.CRC model reveals that the energy recovery efficiency of data driver IC is influenced by three factors,which are the charge time,channel resistor and load capacitor.The compared results of two models show that channel resistor has great influence on energy recovery efficiency of data driver IC.The energy recovery efficiency of PDP data driver IC can be improved significantly by using DPLD transistor which has smaller channel resistor.The proposed CRC and VCCS models can be used to predict the energy recovery efficiency accurately.
出处
《液晶与显示》
CAS
CSCD
北大核心
2014年第6期989-996,共8页
Chinese Journal of Liquid Crystals and Displays
基金
国家公益性行业科研专项(No.GYHY201306079)
国家自然科学基金(No.41275042)
江苏高校优势学科建设工程资助项目
南京信息工程大学科研基金(No.2013X046)
