摘要
高温下半导体材料性能会发生变化,影响太阳电池光电转换效率。为了了解Ga In P/Ga As/Ge三结太阳电池在聚光和高温条件下的工作性质,研究了热加载后的三结太阳电池样品在定压下的电致发光谱,发现受热后Ga In P顶电池和Ga As中电池的电致发光谱的强度发生变化,出现峰值反转的现象。结合光照下伏-安特性、暗伏安特性及外量子效率分析了这种现象产生的原因,即加热过程在Ga In P顶电池中引入晶格结构缺陷,导致其电致发光强度变弱,同时顶电池并联电阻变小,Ga As中电池分压有所增加,发光增强,整个样品的电致发光谱出现峰值反转现象。结果表明Ga As中电池比Ga In P顶电池具有更好的耐热性。
The photoelectric characteristics of solar cells can be changed after heated, which ultimately influence the converting efficiency of solar cell. Electroluminescence spectra of GaInP/GaAs/Ge triple junction solar cell under constant voltage are investigated in order to understand the working properties of such cells under concentration and heating condition. It is found that the luminescence peaks of GaInP top cell and GaAs middle cell change and reverse after the solar cells are heated. By considering the current-voltage characteristic and external quantum efficiency, the origin of this phenomenon is found to attribute to the introduction of deep level defects in the crystal. GaAs middle cell is found to be more tolerant to heat-induced damage than GaInP top cell.
出处
《激光与光电子学进展》
CSCD
北大核心
2014年第12期188-192,共5页
Laser & Optoelectronics Progress
基金
中国工程物理研究院高能激光科学与技术重点实验室基金(HEL2013-06)
中国工程物理研究院流体物理研究所发展基金(SFZ20120303)
关键词
光电子学
太阳电池
热损伤
电致发光
量子效率
optoelectronics
solar cells
heat-induced damage
electroluminescence
quantum efficiency
