摘要
提出了一种适用于无源射频识别RFID电子标签中多次可编程MTP非易失性存储器NVM的新型电流灵敏放大器结构。该电路在不增加面积的情况下具有低功耗、高速度、高可靠性和高灵敏度的优越性能。基于GSMC 0.13μm-CMOS工艺下的仿真结果表明,新型灵敏放大器在-40℃-80℃的环境下具有很高的读取速度,且能够工作在低电压（0.8V）下。在1.2V工作电压、27℃室温下电路的读出延时是10.5ns,平均功耗为6.1μW@25MHz,分辨率可达到33nA。
A novel sense amplifier is proposed to be suitable for the Multiple Time Programmable Nonvolatile Memory （MTP-NVM） of passive Radio-Frequency Identification （RFID）. The circuit has superior performance such as low-power, high speed, reliability and highly sensitive without extra area overhead. The simulation based on GSMC 0.13 μm-CMOS process shows that the new sense amplifier has high read speed and can work at low voltages （0.8 V）. When the voltage is 1.2 V and the tempera- ture is 27℃ ,the read delay is 10.5 ns,the power consumption is 6.1/μW@25 MHz and the current differ- ence it can identify accurately is about 33 nA.
出处
《计算机工程与科学》
CSCD
北大核心
2014年第12期2361-2366,共6页
Computer Engineering & Science
基金
国家自然科学基金资助项目(61201167)
关键词
灵敏放大器
射频识别
非易失性存储器
MTP
低功耗
sense amplifier
radio-frequency identification （RFID）
nonvolatile memory （NVM）
mul- tiple time programmable（MTP）
low power
