摘要
研究主要聚焦在批处理离子注入机台的沟道效应和锥角效应,以及阐述由于这些效应导致的晶圆片上的均匀性问题和产品上的良率损失。对于高能量离子注入,如果离子注入角度设定为0°会导致严重的沟道效应,但是大角度设定又会导致光刻胶的阴影效应,所以对于注入角度的选取需要尽量小。对于越来越先进的半导体工艺技术,线宽越来越小,合适角度设定将显得尤其关键。运用二次离子质谱分析研究了控片上离子注入的分布,通过产品电性合格测试全片多点验证,表明了沟道效应和锥角效应的综合影响;得出了对于不同锥角机台合适的离子注入角度设定。
The study focus on the channeling effect and cone angle effect of ion implantation as processed on batch type implanter, the within wafer uniformity and production yield impact are also investigated. It＇s well know that for high energy implantation, low tilt angle is necessary to avoid photoresist shadowing, but too low, like zero degree IMP angle will cause worse dopant channeling. The proper implantation angle setting is critical to move the advanced CMOS devices to smaller and smaller dimension. In the work, different angle conditions of implantation are used both on blank control wafers and production pattern wafers. These wafers were analyzed by SIMS（Secondary Ion Mass Spectroscopy） and WAT（Wafer Acceptance Test） respectively. The results showed the reasonable and practicable IMP angle setting to be selected.
出处
《电子与封装》
2014年第12期37-41,共5页
Electronics & Packaging
