摘要
综述了近几年微波、毫米波氮化镓高电子迁移率晶体管(Ga N HEMT)与单片微波集成电路(MMIC)在高效率、宽频带、高功率和先进热管理等方面的应用创新进展。介绍了基于Ga N HEMT器件所具有的高功率密度和高击穿电压,采用波形工程原理设计的各类开关模式的高效率功率放大器,以及基于Ga N HEMT器件的高功率密度、高阻抗的特点与先进的宽带拓扑电路和功率合成技术相结合的宽频带和高功率放大器。详细介绍了微波高端和毫米波段的高效率、宽频带和高功率放大器,多功能电路和多功能集成的Ga N MMIC。最后阐述了由于Ga N HEMT的功率密度是其他半导体器件的数倍,其先进热管理的创新研究也成为热点。
The development about applied innovation of the microwave and millimeter wave GaN high electron mobility transistor （HEMT） and monolithic microwave integrated circuit （MMIC） in high efficiency, wide band, high power and advanced thermal management etc. in recent years are summarized. Based on the high power density and high breakdown voltage of GaN HEMT devices, all kinds of the high efficiency switch mode power amplifiers are introduced using the principle of the waveform of engineering design. Based on the high power density and high impedance of GaN HEMT devices combined with advanced broadband topological circuits and power synthesis technology, the wide band and high power amplifiers are introduced. In high-end of microwave band and millimeter wave band, the high efficiency, wide band and high power amplifiers, multi-function circuits and the multifunetional integrated GaN MMIC are introduced in detail. Because the GaN HEMT power density is several times of other semiconductor devices, its innovation research on advanced thermal management has become a hot spot.
出处
《半导体技术》
CAS
CSCD
北大核心
2015年第1期1-7,共7页
Semiconductor Technology
