摘要
采用PECVD技术制备a-Si:H/a-Si:H叠层双结非晶硅电池,研究了本征层厚度对叠层电池功率及短路电流的影响。通过调节顶电池和底电池本征层的沉积时间,得到不同厚度比例的本征层(di1:di2),经过实验对比发现I层总体厚度为650 nm,di1:di2=1:5时得到的电池组件短路电流(Isc)和最大功率(Pmax)都是最大值。此时叠层电池的电流得到了较好的匹配,实现了工艺参数的优化。
PECVD technology was used to prepare a-Si：H/a-Si：H tandem cells. The effects of intrinsic layer thickness on short circuit current matching and power output of tandem cells were investigated. Different thickness ratios（di1：di2） of the intrinsic layer were gotten by changing the deposition time of the top cell and the bottom cell. Through experimental comparison, it is found that the short-circuit current （Isc） and the max Power （Pmax） are maximum when the intrinsic layer thickness is 650 nm and di1：di2 is 1：5. In this condition, the tandem cell has a better current matching, and the optimization of process parameters is achieved.
出处
《电子元件与材料》
CAS
CSCD
2015年第2期31-34,共4页
Electronic Components And Materials
关键词
非晶硅
叠层电池
本征层
沉积
短路电流
工艺参数
a-Si
tandem cell
intrinsic layer
deposition
short-circuit current
process parameters
