摘要
1/f低频电噪声是评估半导体器件质量和寿命的一个重要因素。由于1/f低频电噪声极其微弱,为了检测它,同时最大程度降低放大器的本底噪声,低噪声放大器的设计和实现是至关重要的一个环节。针对1/f低频电噪声信号的特性,在现有低噪声放大器基础上进行优化改进,设计出一款频率极低的低噪声放大器,在0.1 Hz^100 kHz频率下具有高增益和低噪声特性。仿真结果表明,在10Hz处噪声系数达到1.80 d B。
1/f low frequency electrical noise is the key factor to evaluate quality and service life of semiconductor devices.In order to detect 1/f noise and reduce background noise to a maximum degree,the design and implementation of low-noise amplifier are the vital links because 1/f noise is extremely weak. According to the characteristics of 1/f low frequency electrical noise,an extremely low-frequency low-noise amplifier was designed on the basis of optimization of amplifier available. Thenew amplifier has good performance in high-gain and low-noise at the frequency between 0.1 Hz to 100 k Hz. The result of thesimulation indicates that the noise factor is 1.80 d B at 10 Hz.
出处
《现代电子技术》
北大核心
2015年第4期80-83,86,共5页
Modern Electronics Technique
基金
国家自然科学基金青年科学基金:高功率半导体激光器1/f 噪声特性及其检测新方法研究(61204055)
关键词
1/f噪声
极低频
高增益
低噪声放大器
1/f noise
extremely low frequency
high gain
low noise amplifier
