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采用Cascode拓扑和RC反馈网络的高Q差分有源电感 被引量:2

A High Q Differential Active Inductor Employing Cascode Topology and RC Feedback Network
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摘要 针对传统全差分有源电感在高频下品质因子Q较低的问题,联合使用Cascode拓扑和RC反馈网络对其进行优化。组合电路引入的双重负阻有效抵消了有源电感的寄生电阻,进而有效提高了高频下的Q值。基于Jazz 0.35μm SiGe BiCMOS工艺,利用射频仿真软件ADS完成电路设计与仿真。仿真结果表明,在联合采用了Cascode拓扑和RC反馈网络后,在频率大于1GHz时,有源电感的Q值明显提高;在1.3~3GHz频率范围内,Q值均大于20;在2.1GHz时,Q值达到最大值4 416,电感值变化范围为6.9~12nH。 To solve the problem of the low quality factor Q of the traditional fully differential active inductor(DAI)at high frequency,the combination of the cascode topology and the RC feedback network was employed to optimize the DAI.The two-fold negative resistance provided by the combination circuits had cancelled the parasitic positive resistance effectively,hence had increased Q at high frequency.Based on Jazz 0.35μm SiGe BiCMOS process,the novel DAI was designed and verified by ADS.The results indicated that the use of cascode topology and RC feedback network had improved obviously Qof DAI at the frequency more than 1GHz.In the frequency range from 1.3GHz to 3GHz,Qexceeded 20,and Qat maximum could reach 4 416 at 2.1GHz.The inductance varied from 6.9nH to 12 nH.
出处 《微电子学》 CAS CSCD 北大核心 2015年第1期67-71,共5页 Microelectronics
基金 国家自然科学基金资助项目(60776051 61006044 61006059) 北京市自然科学基金资助项目(4142007) 山东省高等学校科技计划项目(J13LN09)
关键词 有源电感 品质因子 RC反馈网络 Cascode拓扑 Active inductor Quality factor RC feedback network Cascode topology
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参考文献12

  • 1HWANGK S, CHO C S, LEE J W, et al. High quality-factor and inductance of symmetric differential- pair structure active inductor using a feedback resistance design [C] // Microwave Symp Digest. Atlanta, GA, USA, 2008, 1059-1062.
  • 2ANDERSON D P, WEBER R J, RUSSELL S F. Bipolar active inductor realizability limits, distortion, and bias considerations [C] // IEEE 39th Midwest Symp Circ Syst. Ames, IA, USA, 1996: 241-244.
  • 3FILANOVSKY I M, REJA M, OLIVEIRA L B. New non-gyrator type active inductors with applications [C] // IEEE 54th Int Midwest Syrup Circ Syst. Seoul, Korea, 2011: 1-4.
  • 4LI C J, WANG P S. A high frequency tunable differential active inductor and its application to power dividers [C] // IEEE 51th Midwest Symp Cite Syst. Knoxville, TN, USA, 2008, 285-288.
  • 5LERCL, A'AIN A K B, KORDESH A V. CMOS source degenerated differential active inductor [J]. Elec Lett, 2008, 44(3): 196-197.
  • 6BELMAS F, HAMEAU F, FOURNIER J F. A new method for performance control of a differential active inductor for low power 2.4 OHz applications [C] // IEEE Int Conf IC Des Tech. Grenoble, France. 2010: 244-247.
  • 7RAZAVI B. RF microelectronics [M]. Beijing : Publishing House of Electronics Industry,2012: 62-63.
  • 8赵彦晓,张万荣,谢红云,郭振杰,丁春宝,付强.应用于射频前端的高Q值SiGe HBT有源电感[J].半导体技术,2013,38(2):101-104. 被引量:4
  • 9王伟印,沈琪,顾晓峰,赵琳娜.基于0.18μm CMOS RF工艺的有源电感设计与优化[J].微电子学,2012,42(6):792-795. 被引量:1
  • 10郭振杰,张万荣,谢红云,金冬月,丁春宝,陈亮,邢光辉,路志义,张瑜洁.射频前端宽带高Q值可调节集成有源电感[J].微电子学,2012,42(5):676-679. 被引量:5

二级参考文献14

  • 1吉小冬,孙玲,包志华.基于0.6 μm CMOS工艺的单片集成有源电感设计[J].中国集成电路,2006,15(8):49-52. 被引量:2
  • 2YANG S-G, symmetrical, inductor [ C] Kong, China. RYU G-H, SEO K-S. differential-pair type floating // IEEE Int Symp Circ Syst. 1997: 93-96. Fully active Hong.
  • 3LU L-H, HSIEH H-H, LIAO Y-T. A wide tuning- range CMOS VCO with a differential tunable active inductor [J]. IEEE Trans Microwave Theo Tech, 2004, 54(9) : 3462-3468.
  • 4WENG R, KUO R. A Q tunable CMOS active inductor for RF band pass filters [C] // Symp Sign Syst Elec. Montreal, Canada. 2007: 571-574.
  • 5HSIAO C, KUO C, HO C, et al. Improved quality factor of 0.18 /m CMOS active inductor by a feedback resistance design [J]. IEEE Microwave Wireless Compon Lett, 2002 2(12): 467-469.
  • 6DANESH M, LONG J R, HADAWAY R, et al. A Q factor enhancement technique for MMIC inductors [C] // Proc IEEE MTT-S RFIC Symp. Baltimore, MD, USA. 1998: 217-220.
  • 7MUKHOPADHYAY R, PARK Y, YOON S W. Active inductor-based low-power broadband harmonic VCO in SiGe technology for wideband and multi- standard applications [-C // IEEE MTT-S Int Microwave Syrup. Long Beach, CA, USA. 2005 1349-1352.
  • 8NIKNEJAD A M, MEYER R G. Analysis, design, and optimization of spiral inductors and transformer for Si RFIC' s [J]. IEEE J Sol Sta Circ, 1998, 33 (10) : 1470-1481.
  • 9LER C L, A'AIN A, KORDESH A. CMOS source degenerated differential active inductor [J]. Elec Lett, 2008, 44(3): 196-197.
  • 10MAUNDY B, GIFT S, ARONHIME P. A novel hybrid active inductor[J]. IEEE Trans Circ : Syst II, 2007, 54(8). 663-667.

共引文献5

同被引文献16

  • 1方东明,赵小林,王西宁,周勇.射频螺线管微电感的设计和仿真[J].传感技术学报,2006,19(05B):1878-1880. 被引量:4
  • 2WANG T P. A fully integrated W-band push-push CMOS VCO with low phase noise and wide tuning range [J]. IEEE Trans Ultrason, Ferroelec & Freq Control, 2011, 58(7): 1307-1319.
  • 3PARK D, CHO S. A power-optimized CMOS LC VCO with wide tuning range in 0.5-V supply [C] // IEEE Int Symp Circ & Syst. Island of Kos, Greece. 2006: 3233-3236.
  • 4ZOU W, CHEN X, DAI K, et al. Switched inductor VCO based on tapped vertical solenoid inductors [J]. Elec Lett, 2012, 48(9): 509-511.
  • 5KIA H B, A' AIN A K, GROUT I. Wide tuning- range CMOS VCO based on a tunable active inductor [J]. Int J Eiec, 2014, 101(1) : 88-97.
  • 6LU L H, HSIEH H H, LIAO Y T. A wide tuning- range CMOS VCO with a differential tunable active inductor [J]. IEEE Trans Microwave Theo & Tech, 2006, 54(9): 3462-3468.
  • 7ZITO D, PEPE D, FONTE A. 13 GHz CMOS Active Inductor LC VCO [J]. IEEE Microwave & Wireless Compon Lett, 2012, 22(3): 138-140.
  • 8EUNSK, CHOC S, LEEJ W, et al. Alow power VCO using active inductor for low phase noise and wide tuning range [C] /// Europ Microwave Conf. Rome, Italy. 2009: 1255-1258.
  • 9WEI C C, CHIU H C, FENG W S. An ultra- wideband CMOS VCO with 3-5 GHz tuning range [C] // Proceed IEEE Int Workshop Radio-Freq Integr Technol: Integr Circ Wideband Commun & Wireless Sensor Networks. Singapore. 2005: 87-90.
  • 10LIRC.RFcircuitdesign[M].鲍景富,唐宗熙,译.北京:电子工业出版社,2011:178-179.

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