摘要
腔室气密性是影响集成电路（IC）装备真空腔室内流场均匀性的重要因素，腔室漏率数量级不高于10^-6Pa·m^3／s、极限真空度数量级不高于10^-4Pa，才能满足IC工艺的漏率要求．本文用氮质谱检漏仪检测真空腔室泄漏情况，并将泄漏处逐一进行堵漏处理，使腔室气密性能达到IC装备的工艺要求．用静态升压法计算得出腔室漏率为8．84×10^6Pa·m^3／s，极限真空度为2×10-^4Pa,考虑用于实际生产的工艺腔室体积小（10-30L），而本实验腔室体积（84．5L）较大，所以搭建的真空室可以满足IC装备的漏率要求。
Chamber air tightness is an important factor affecting flow field uniformity of IC equipment.Only when the magnitude of chamber leakage rate is not higher than 10^-6 Pa·m^3 and the ultimate vacuum degree is not higher than 10^-4 Pacan the tightness meet the leakage rate requirements of IC process. In this study, helium mass spectrometer is used to detect vacuum chamber leakage, and leaking points are treated one by one using plugging processing to enable chamber air-tightness to meet the process requirements of IC equipment. The chamber leakage obtained through calculation using the static pressurizing method is 8.84×10^-6Pa·m^3/s and the ultimate vacuum degree is 2×10^-4 Pa. Considering the small volume （10-30 L）of the actual production process chamber and the relatively large volume of the experimental chamber, the vacuum chambers established can meet the IC equipment leak rate requirements.
出处
《五邑大学学报（自然科学版）》
CAS
2015年第1期59-63,78,共6页
Journal of Wuyi University(Natural Science Edition)
基金
国家科技重大专项资助项目(2011ZX02403-004)
关键词
真空腔室
氦质谱检漏仪
静态升压法
漏率
vacuum chambers
helium mass spectrometer
static pressurizing method
leakage rates
