摘要
以光学滤光片薄膜边缘应力作为对象,研究了Ge/Zn S单、多层光学薄膜应力的变化规律。通过实验研究了离子束轰击能量以及真空退火温度等因素对Ge/Zn S光学薄膜应力类型、大小、变化及其分布的影响规律。Zn S薄膜的应力为压应力,采用离子束辅助工艺后薄膜边缘应力变得均匀;真空退火使Zn S薄膜的应力减小为原来的一半。通过优化沉积参数和张应力、压应力薄膜的组合降低了Ge/Zn S多层光学薄膜的应力,结果表明其平均应力分别为0.1 MPa,而且处于压应力状态。
Stress is a universal phenomenon in thin film deposition. It has important effect on structure and per- formance of thin film. In order to improve optical and mechanical performance of filters, the stress in ZnS/Ge optical thin film and stress control technology are studied by theory and experiments. It is found that ion beam bombardment and vacuum annealing ＇affect the stress in thin film. The stress in ZnS films is compressive stress. Ion beam assisted deposition makes the stress uniformity in ZnS films. Vacuum annealing makes compressive stress in ZnS films half of the value before annealing. Finite element method analysis results of ZnS/Ge multilayer thin films show the thermal stress has larger value on edge of thin film and substrate. Thin film has larger deformation on edge. The results show that ZnS/Ge muhilayer thin film filters have less compressive stress by optimum deposition and different stress films. The average stress is 0. l MPa respectively.
出处
《宇航材料工艺》
CAS
CSCD
北大核心
2015年第1期14-17,共4页
Aerospace Materials & Technology
基金
重点实验室基金(9140C540301110C5402)
关键词
光学薄膜
边缘效应
应力模型
Optical thin film, Edge effect ,Stress model
