摘要
文章采用溶胶—凝胶法分别以四氯化钛和钛酸四丁酯作为前驱体,在热处理温度为400~500℃条件下,制得晶相结构为锐钛矿Ti O2薄膜,但以四氯化钛为前驱体的Ti O2薄膜易开裂;以钛酸四丁酯为前驱体的Ti O2薄膜更加致密均匀,薄膜品质更优;所制得的Ti O2薄膜表现出半导体性质,方块电阻在几十兆欧每平方范围内;Ti O2薄膜随着热处理温度升高,导电性增强。
In the paper, the sol-gel method, respectively titanium tetrachloride and tetrabutyl titanate as precursor, the heat treatment temperature is 400--500 ℃ under the conditions to obtain the crystalline structure of anatase TiO2 film, but TiO2 thin films of titanium tetrachloride as a precursor of easy to crack; tetrabutyl titanate precursor for TiO2 film is more dense and uniform, better quality film; TiO2 thin films prepared performance of the semiconductor properties, the sheet resistance in the tens megohms per square within range; TiO2 film with the heat treatment temperature, conductivity enhancement.
出处
《广东化工》
CAS
2015年第8期44-46,共3页
Guangdong Chemical Industry
基金
国家自然科学基金委项目资助(51172031)
