摘要
采用移动加热器法生长铟惨杂浓度为5×10^17atoms/cm3的Cd0.9Mn0.1Te（CMT）和Cd0.9Zn0.1Te（CZT）单晶。生长得到的CMT晶体和CZT晶体电阻率范围为4.5×10^9~6.2×10^10Ω·cm。CMT晶体的成分均匀性要优于CZT晶体,拟合得到CMT和CZT晶体中Mn和Zn的分凝系数分别为0.95和1.23。富Te区在两种晶体生长过程中都具有显著的提纯作用,In惨杂的浓度范围均在6.4~14.4 ppm范围内。红外透射显微镜观察到三角形和六边形为主的Te夹杂的尺寸5~24μm,浓度为105cm-3。除最后结晶区之外,沿晶体生长方向Te夹杂的尺寸逐渐减小而浓度逐渐增大。制备的CMT和CZT探测器对59.5 keV 241Am放射源均有能谱响应,能量分辨率分别为23.2%和24.6%。
The Cd0. 9Mn0. 1Te（ CMT） and Cd0. 9Zn0. 1Te（ CZT） single crystals were grown by the traveling heater method（ THM） technique from Te solvent. The indium dopants with 5 × 1017 atoms / cm3 were added in both crystals. The resistivity of the CMT and CZT crystal is in the range of 4. 5 × 10^9-6. 2 × 10^10Ω· cm. The uniformity of Mn in CMT crystal is better than that of Zn in CZT crystal,with the segregation coefficient of Mn in CMT of 0. 95 and Zn in CZT of 1. 23. The Te solvent show purifying effects during the crystal growth,and the In dopant distributed uniformly in both crystals with the concentration of 6. 4-14. 4 ppm. Te inclusions with regular triangular or hexagonal shapes were observed in the crystals from IR transmission microscopy,with a density of ~ 105cm- 3and size of 5-24 μm. The Te inclusion densities tend to increase while their sizes tend to decrease along the growth directions in both CZT and CMT crystals,except in the last-to-freeze regions. Under the 59. 5 ke V241 Am irradiation,the planar CMT detector show an energy resolution of 23. 2%,the planar CZT detector show of 24. 6%.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2015年第4期872-878,共7页
Journal of Synthetic Crystals
基金
National Natural Science Foundation of China(11275122,51472155,11375112)
