摘要
采用RF-PECVD法制备了磷掺杂氢化非晶硅(a-Si∶H)薄膜作为太阳电池窗口层。通过椭偏仪、Keithley 4200对所制备样品进行分析测试,研究了不同掺杂比例对非晶硅薄膜沉积速率、消光系数、折射率、光学带隙及电导率等的影响。实验表明:薄膜沉积速率随掺杂浓度升高先减小再增大;薄膜消光系数、折射率及禁带宽度随掺杂浓度升高呈现先减小后增大再减小的现象;电导率则先增大后减小再增大。
The a-Si∶H films used as the window layer of solar cells were fabricated by RFPECVD.The effects of phosphorus-doped dilution on the deposition rate,extinction coefficient,refractive index,energy gap and conductivity properties of a-Si∶H films were investigated with ellipsometer and Keithley 4200.The results indicate that the deposition rate reduces first and then increases;the extinction coefficient,refractive index and energy gap decrease first,then increase and then decrease again;while the conductivity increases first,then decreases and then increases again.
出处
《半导体光电》
CAS
北大核心
2015年第2期233-235,318,共4页
Semiconductor Optoelectronics
