摘要
基于变容二极管设计了215 GHz三倍频器。为了简化结构和提高功率容量，该倍频器采用同向并联二极管对结构实现非平衡式三倍频。由于在太赫兹频段二极管的封装会影响到器件的场分布，将传统的二极管SPICE参数直接应用于太赫兹频段的电路设计仿真存在一定缺陷。故建立了精确的二极管三维电磁模型，在非线性区域合理的设置了波端口，采用改进型场路结合仿真的方式对倍频器进行了设计。测试结果表明，该倍频器在207～226 GHz输出频率范围内，输出功率大于2 mW，最大输出功率为5.4 mW，最小变频损耗为13.1 dB。
A 215GHz tripler using varactor diodes was designed. To simplify structure and enhance power capacity, a parallel diode pair was applied to realize imbalanced multiplier structure. The field distribution in circuit is seriously affected by the package of diodes at terahertz band, so the traditional method of applying SPICE parameters to design and simulate circuit is defective. The three-dimensional （3D） electromagnetic （EM） model was built precisely, and wave ports were set at the Schottky contact areas appropriately. The overall simulation of the tripler was realized in improved field-circuit combination way. The results show that in the range of 207 GHz to 226 GHz the maximum output power is 5.4mW, the minimum conversion loss is 13.1dB, and the output power is larger than 2mW.
出处
《电子科技大学学报》
EI
CAS
CSCD
北大核心
2015年第3期369-374,共6页
Journal of University of Electronic Science and Technology of China
基金
国家高技术研究发展计划(ZYGX2011X002)
中央高校基本科研业务费专项资金(ZYGX2011J018)
关键词
谐波平衡法
非平衡式倍频
太赫兹
三倍频器
变容二极管
harmonic balance analysis
imbalanced multiplier structure
terahertz
tripler
varactor diode
