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Cr_2AlC陶瓷的无压合成及氢氟酸腐蚀行为研究 被引量:2

Pressureless Synthesis and HF Acid Etching Behaviour on Cr_2AlC Ceramic
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摘要 为了验证是否可以利用氢氟酸刻蚀Cr2AlC制备二维晶体MXene,本文采用气氛保护管式炉,在不同合成温度、保温时间及配比条件下制备出Cr2AlC样品,通过XRD图谱分析找出最佳原料配比为Cr∶Al∶C=2∶1.1∶1,合成温度为1400℃,保温时间为1 h。然后在此工艺条件下,制备疏松的样品,并用砂纸打磨去掉含有较多杂质的表层,然后把样品粉磨成大小不同的颗粒。这些颗粒放入氢氟酸中处理,将真空干燥后的反应产物进行XRD分析,结果表明Cr2AlC样品颗粒越小,反应时间越长,反应温度越高,HF酸浓度越高,Cr2AlC越容易被腐蚀,但是反应产物中均不存在二维晶体MXene,证明利用HF酸刻蚀Cr2AlC制备二维晶体MXene的方法不可行。 Ternary carbide Cr2AlC was synthesized by a tube furnace in Ar atmosphere at different temperatures, holding time and different ratio of starting materials. The XRD patterns of the samples showed that the best condition for this synthesis is that Cr: Al: C = 2:1.1 : 1, temperature was 1400 ℃, and that holding time was 1 h. Then, synthesized Cr2AlC was ground to 325 mesh and 500 mesh and the resistance to HF acid etching are studied. The etching products were dried in vacuum and checked by X-ray diffraction to study and understand the impact of the particle size, reaction time, temperature and concentration of HF acid. Experimental results show that the smaller the particle size of CrzAlC, the longer the reaction time, the higher the reaction temperature, the higher the concentration of HF acid, the more Cr2AlC was etched. And due to the reaction product did not contain any two-dimensional crystal MXene, it is not feasible to prepare MXene Cr2C by the method of HF acid etching Cr2AlC.
出处 《硅酸盐通报》 CAS CSCD 北大核心 2015年第5期1252-1257,共6页 Bulletin of the Chinese Ceramic Society
基金 国家自然科学基金(51472075) 河南省科技创新人才计划(134100510008) 河南省高校青年骨干教师资助计划(2012GGJS-054)
关键词 Cr2AlC陶瓷 无压合成 腐蚀性 MXene Cr2AlC ceramic pressureless synthesis etching MXene
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