摘要
针对带隙参考电压基准温漂问题设计了一款高阶补偿电路,并采用0.5μm BCD工艺进行了验证。电路采用零温度系数(TC)电流实现一阶补偿,同时采用具有正温度系数(PTC)的双极型晶体管(BJT)实现了高阶补偿。采用HSPICE软件进行了仿真,结果表明,所设计的电路参考电压正常值为1.8 V。另外,设计的电路具有1.5×10-6/℃的温度系数,在低频上具有55 d B电源抑制比(PSRR),从1.8~5 V具有0.4 m V/V的线性调整率,并得到20 f V2/Hz的输出噪声水平。提出的电路已应用在一款电源管理芯片中,且该电路可应用在多种便携式电子产品中。
A high-order curvature compensating circuit was presented to overcome the temperature drift of the bandgap voltage reference（ BVR） circuit that was implemented in a 0. 5 μm BCD process to be validated. A zero temperature coefficient（ TC） current was used to realize the first-order compensation as well as a positive temperature coefficient（ PTC） current with bipolar junction transistors（ BJTs）to achieve high-order compensation. The simulation results with HSPICE software show that the proposed voltage reference works normally at 1. 8 V. In addition, the designed circuits with a TC of 1. 5 ×10^- 6/ ℃,a power supply rejection ratio（ PSRR） of 55 d B at low frequencies, a line regulation of0. 4 m V / V from 1. 8 V to 5 V and an output noise level of 20 f V2/ Hz are achieved. The presented circuits were applied in a power management integrated circuit（ IC） and can be widely applied in portable equipments.
出处
《半导体技术》
CAS
CSCD
北大核心
2015年第6期411-416,共6页
Semiconductor Technology
基金
重点大学基础研究基金资助项目(JB140220)
