摘要
Two-dimensional layered IV-VI chalcogenides are attracting great interest for applications in next-generation optoelectronic, photovoltaic, and thermoelectric devices. However, great challenges in the controllable synthesis of high-quality IV-VI chalcogenide nanostructures have hindered their in-depth studies and practical applications to date. Here we report, for the first time, a feasible synthesis of single-crystal IV-VI SnSe nanoplates in a controlled manner on mica substrates by vapor transport deposition. The as-grown SnSe nanoplates have approximately square shapes with controllable side lengths varying from I to 6 Dm. Electrical transport and optoelectronic measurements show that as-obtained SnSe nanoplates display p-type conductivity and high photoresponsivity.
二维的分层的 IVVI chalcogenides 在下一代的 optoelectronic 为应用正在吸引大兴趣，光电、热电的设备。然而，在高质量的 IVVI chalcogenide nanostructures 的可控制的合成的大挑战迄今为止妨碍了他们的深入的研究和实际应用。第一次，这里，我们由蒸汽运输免职在云母底层上以一种控制方式报导单个水晶的 IVVI SnSe nanoplates 的可行合成。成长得当的 SnSe nanoplates 有近似方形的形状，可控制的方面长度从 1 ～ 6 m 变化。电的运输和 optoelectronic 大小证明同样获得的 SnSe nanoplates 显示 p 类型电导率和高 photoresponsivity。
