摘要
提出一种应用于相变存储器芯片的新型开关电容电荷泵。对于16位的相变存储器芯片,系统擦写时间大于100ns,电荷泵的驱动能力至少为60mA。相比于传统开关电容电荷泵,该电荷泵根据负载电流大小自动生成一个使能信号,该信号通过控制升压模块功率管的开启与关断来调节输出电压,最终将输出电压控制在一个允许的范围内波动。采用40nm CMOS工艺对电荷泵进行设计和仿真,结果表明在5mA负载时,电源效率为87%,输出纹波为2.84mV;负载电流从0mA变化到60mA时,电源效率皆高于82%;负载电流变化在300mA/μs时,输出瞬态响应时间为1.63μs,满足相变存储器芯片的使用要求。
A switched-capacitor （SC） charge pump for phase change memory （PCM） was presented. For a 16- bit-parallelism PCM, set/reset time was more than 100 ns, and the charge pump could output a minimum 60 mA load current. Different from conventional SC charge pump, the proposed charge pump generated an Enable signal which averaged lasting time changes under different load conditions. The Enable signal then controlled the booster＇s power transistor switching to regulate the output voltage. In this way, the output voltage could fluctuate within a permissible range. The charge pump was designed and simulated in a 40nm CMOS process. The results showed that the power efficiency was 87- and the output ripple was 2.84 mV with a load current of 5 mA. The minimum power efficiency was 82-- with the load current changing from 0 to 60 mA. The output transient recovery time was 1.63 /zs with the load-current step changing of 300 mA/#s. The proposed charge pump met the requirement for the PCM＇s chips.
出处
《微电子学》
CAS
CSCD
北大核心
2015年第3期335-339,344,共6页
Microelectronics
基金
国家重点基础研究发展计划(2010CB934300
2013CBA01900
2011CBA00607
2011CB932804)
国家自然科学基金资助项目(61076121
61176122
61106001
61261160500
61376006)
上海市科委资助项目(11DZ2261000
12nm0503701
12QA1403900
13ZR1447200
13DZ2295700)
国家集成电路重大专项(2009ZX02023-003)
关键词
电荷泵
输出电压自动调节
输出纹波
电源效率
负载瞬态响应
Charge pump
Auto-adjustable output regulation
Output ripple
Power efficiency
Load transientresponse
