摘要
容性耦合等离子体射频放电广泛应用于IC制造中的薄膜沉积、刻蚀工艺中,等离子体中的电子密度和平均电子温度直接影响离化及激发反应速率,其在放电腔室中径向分布的均匀性严重影响刻蚀和薄膜沉积的均匀性。以某12寸腔体为研究对象,采用Comsol软件仿真研究了功率电极电压、腔室气压和极板间距对等离子体的电子密度和平均电子温度的影响规律。仿真研究发现:在研究的气压、电压、极板间距范围内,电子密度和平均电子温度随电压的增加而增加,其均匀性随电压的增加而变差;电子密度随气压的增加而增加,平均电子温度随气压的增加而降低,电子密度的均匀性随气压的增加而改善,电子温度的均匀性随气压的增加先变差再变好;电子密度随极板间距的增加而增加,平均电子温度随极板的增加而降低,电子密度和平均电子温度的均匀性随极板间距的增加而变好。研究结果对指导等离子体参与的IC工艺腔室结构设计及工艺控制具有重要意义。
The RF-discharge of the capacitively-coupled plasma（CCP）, widely used in film-growth and/or ion-etch- ing for integrated circuits （IC） fabrication, was approximated, modeled, analyzed, and simulated with software COMSOL. The influence of the discharge conditions, including the voltage, pressure and electrode gap, on the electron density and average electron temperature of the plasma in a 12-inch chamber was investigated. The simulated results show that the al- lowable major discharge conditions strongly affect the characteristics of CCP plasma. For example, （i） As the voltage in- creases, both the electron density and average electron temperature increase, accompanied by deteriorating uniformity of their radial distributions;（ii）As the pressure increases, the electron density increases with improving uniform;but the av- erage electron temperature decreases with its tmifonnity changing in a decrease-increase mode; and（iii） As the electrodegap increases, the electron density increases and the average electron temperature decreases, with increasingly improved uniformity of their distributions. We suggest that the simulated results be of much technological interest.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2015年第6期639-645,共7页
Chinese Journal of Vacuum Science and Technology
基金
国家科技重大专项02专项资助项目(2011ZX02403)
关键词
容性耦合等离子体
放电参数
氩气放电
射频放电特性
Capacitively coupled plasma, Discharge parameter, Argon discharge, Radio-frequency discharge charac-teristic
