摘要
以YSZ为基片对以乳酸为溶剂的Gd Bi O3(GBO)缓冲层的化学溶液法(CSD)快速制备工艺进行了研究,着重研究了工艺温度对挥发和外延过程的影响。研究结果表明,涂覆薄膜中的乳酸可以在115℃-30min内几乎完全挥发,低于100℃时难以完全挥发出无水的硝酸盐混合膜。Ar气中GBO的最佳外延温度为800℃时间为1h。GBO缓冲层CSD法制备总工艺时间约为1.5小时。在此YSZ/GBO缓冲层上CSD法制备的YBa2C3Oz膜的转变温度可达90K。
Quick preparation of GdBiO3 ( GBO ) buffer layer on single crystal YSZ by a chemical solution decomposition (CSD) based on lactic -acid was investigated especially about the temperature dependence of volatilization and growth processes. As restdts, almost a/1 the lactic - acid in coated layer would be volatilized within 30min at 115℃, while crystal water retained in the volatilized nitrate film below 100℃. The proper process conduction for growth in Ar gas was about 800℃ for 1 h. The total time for preparation of GBO by CSD based on lactic - acid was about 1.5 hours. The Tcin following coated superconductor layer of YBa2C3Oxon GBO was about 9OK.
出处
《低温与超导》
CAS
北大核心
2015年第7期46-50,共5页
Cryogenics and Superconductivity
基金
国家自然科学基金(51072168)
中央高校基本科研业务费专项资金(2682014ZT-9)资助