摘要
CaCu3Ti4O12 ceramic with a giant dielectric constant was synthesized by sol-gel method and sintered in three different sintering conditions： 1 035 ℃ for 48 h, 1 080 ℃ for 3 h and 48 h. The phase of the ceramics, the element distribution, the valance state of Ti ions at grain boundaries, and the electrical properties were characterized via X-ray diffraction（XRD）, energy dispersive X-ray analysis（EDAX）, X-ray photoelectron spectroscopy（XPS）, electrical conduction and dielectric measurement. The results demonstrate that the grain-boundary microstructure and the electrical properties are influenced by sintering conditions： 1 By raising sintering temperature, the Cu-rich and Ti-poor grain boundary was formed and grain resistivity was decreased. 2 By prolonging sintering time, the content of Ti3＋ near the grain boundary increased, leading to the decrease of the grain-boundary resistivity and the increase of the activation energy at grain boundary. The ceramic, sintering at 1 080 ℃ for 48 h, exhibited a small grain resistivity（60.5 ＊cm）, a large grain-boundary activation energy（0.42 e V）, and a significantly enhanced dielectric constant（close to 1×105 at a low frequency of 1×103 Hz）. The results of electrical properties accord with the internal boundary layer capacitor model for explaining the giant dielectric constant observed in Ca Cu3Ti4O12 ceramics.
CaCu3Ti4O12 ceramic with a giant dielectric constant was synthesized by sol-gel method and sintered in three different sintering conditions： 1 035 ℃ for 48 h, 1 080 ℃ for 3 h and 48 h. The phase of the ceramics, the element distribution, the valance state of Ti ions at grain boundaries, and the electrical properties were characterized via X-ray diffraction（XRD）, energy dispersive X-ray analysis（EDAX）, X-ray photoelectron spectroscopy（XPS）, electrical conduction and dielectric measurement. The results demonstrate that the grain-boundary microstructure and the electrical properties are influenced by sintering conditions： 1 By raising sintering temperature, the Cu-rich and Ti-poor grain boundary was formed and grain resistivity was decreased. 2 By prolonging sintering time, the content of Ti3＋ near the grain boundary increased, leading to the decrease of the grain-boundary resistivity and the increase of the activation energy at grain boundary. The ceramic, sintering at 1 080 ℃ for 48 h, exhibited a small grain resistivity（60.5 ＊cm）, a large grain-boundary activation energy（0.42 e V）, and a significantly enhanced dielectric constant（close to 1×105 at a low frequency of 1×103 Hz）. The results of electrical properties accord with the internal boundary layer capacitor model for explaining the giant dielectric constant observed in Ca Cu3Ti4O12 ceramics.
基金
Supported by the National Natural Science Foundation of China(51172166)
the Ph.D.Programs Foundation of City College,Wuhan University of Science and Technology(2014CYBSKY003)
