摘要
在硅基底上利用喷射电沉积法制备铜/钴多层膜和单层纯铜膜,研究了多层膜的形貌、多层膜和单层铜膜与基体的结合力以及划痕方向对膜基结合力的影响。结果表明:对硅基底进行抛光处理可使膜基结合力减小,粗化处理可在一定程度上提高膜基结合力;多层膜与基底的结合力大于单层铜膜与基底的结合力;当划痕方向平行于工件运动方向时,膜层中的内应力变化不均匀,很容易造成应力累积而使得临界载荷减小,从而使得膜基结合力明显小于划痕方向垂直于工件运动方向时的膜基结合力。
Cu/Co multilayer film and single-layer copper film on silicon substrate were prepared by jet electrodeposition.The morphology of the multilayer film,the adhesion between multilayer and substrate,the adhesion between single-layer copper film and substrate,and the effects of scratch directions on the adhesion were studied.The results show that polishing the substrate can decrease the adhesion between the film and the substrate,and roughening can improve the adhesion to some extent.The adhesion between multilayer film and substrate is higher than that between single-film and substrate.When the scratch direction is parallel to the direction of the workpiece movement direction,the internal stress is nonuniform,easily to cause the stress accumulation and then make the critical load decreasing,resulting in the adhesion less than the one with scratch direction perpendicular to the workpiece movement direction obviously.
出处
《机械工程材料》
CAS
CSCD
北大核心
2015年第7期35-39,共5页
Materials For Mechanical Engineering
基金
国家自然科学基金(青年基金)资助项目(51105204)
教育部博士点基金资助项目(20113218120022)
关键词
喷射电沉积
硅
铜/钴多层膜
结合力
jet electrodeposition
silicon
Cu/Co multilayer film
adhesion
