摘要
为了增强β-FeSi2薄膜的发光强度，通过脉冲激光轰击（PLD）β-FeSi2和Si靶材沉积于Si（111）面制备了优质的β—FeSi2／Si薄膜，薄膜表面光滑、平整，β—FeSi2颗粒尺寸在20～50nm左右。光致发光（PL）测试显示，β-FeSi2／Si薄膜在低温下（20K）在1540nm左右的近红外处有一较强发光峰，对应β-FeSi2带-带跃迁。对Si层进行掺杂Er^3＋处理，发现处理后的β-FeSi2／Si：Er薄膜发光强度得到明显地增强，掺入Er使β-FeSi2／Si薄膜非辐射复合中心得到有效地抑制，且β—FeSi2／Si：Er薄膜的红外发光来自Er^3＋离子的^4I13／2→^4I15/2的跃迁和β-FeSi2纳米颗粒带带复合的发光叠加。
The high quality β-FeSi2/Si films whose surfaces are smooth and even on Si （111） are fabricated by pulsed laser deposition （PLD）, and the sizes of β-FeSi2 nanocrystals are about 20-50 nm. Photoluminescence （PL） characteristics of hybrid β- FeSi2/Si films are investigated at low temperature （20 K）. The β- FeSi2/Si films show a relatively PL peak at 1540 rim, which corresponds to the band-band recombination of β-FeSi2. Er^3＋ is doped into Si layer, and theβ-FeSi2/Si： Er shows increase of PL intensity and is a novel approach to decrease the nonradiative centers. The infrared emission of β-FeSiJSi： Er films originat from the stark of 4I13/2→^4I15/2 in Er^3＋ and band-band recombination in β-FeSi2.
出处
《激光与光电子学进展》
CSCD
北大核心
2015年第8期340-343,共4页
Laser & Optoelectronics Progress
基金
国家自然科学基金(11264040)
新疆师范大学理论物理自治区重点学科招标课题(13XSQZ0603)
新疆师范大学博士启动基金(XJNUBS1409)
