摘要
采用PMMA/P（MMA-MAA）/PMMA三层胶结构,通过优化电子束直写电压、束流和显影等工艺参数,得到了理想的光刻胶形貌。利用干法刻蚀和湿法腐蚀相结合的方法实现了双凹槽栅结构。通过优化蒸发功率、蒸发时间及各层金属厚度,解决了栅掉帽的问题。开发了90 nm自对准双凹槽T型栅电子束三层胶光刻工艺技术。应用90 nmT型栅工艺制作了W波段GaAs PHEMT功率放大器及V波段Ga As PHEMT低噪声放大器。测试结果表明,在频率为90~96 GHz、源漏电压5 V、栅源电压-0.3 V、输入功率13 dBm时,功率放大器电路输出功率为20.8 dBm,功率增益为7.8 dB;在频率为57~64 GHz、源漏电压2.5 V、漏极电流55 m A时,低噪声放大器增益大于24 dB,带内噪声系数小于3.5 dB,验证了该工艺技术的可行性和可应用性。
By utilizing the tri-layer structure of PMMA/P （MMA-MAA） /PMMA, an ideal mor- phology of the photoresist was obtained by optimizing process parameters, such as the direct-writing voltage, beam current, developing. A double gate-recessed structure was realized by using dry etching and wet etching. The problem of gate cap falling off was resolved by optimizing the evaporation power, the evaporation time and the metal thickness of each layer. The 90 nm self-align double recesed T-gate electron beam lithography procees of tri-layer photoresist was developed. A W-band power GaAs PHEMT power amplifier and a V-band GaAs PHEMT low noise amplifier were fabricated successfully based on the 90 nm T-gate process technology. Test results show that at the frequency from 90 GHz to 96 GHz, the out- put power is 20. 8 dBm and the power gain is 7.8 dB, when the drain voltage is 5 V, the gate voltage is -0.3 V and the input power is 13 dBm. At the frequency from 57 GHz to 64 GHz, drain voltage of 2.5 V and driain current of 55 mA, the gain of low noise amplifier is greater than 24 dB, and the noise figure over whole band is less than 3.5 dB. The results show that the technology is feasible and can be applied.
出处
《半导体技术》
CAS
CSCD
北大核心
2015年第8期611-615,共5页
Semiconductor Technology
