摘要
近年来随着氮化镓器件制造工艺的迅速发展,氮化镓高电子迁移率晶体管(Ga N HEMT)已经开始应用在电力电子领域。高压共源共栅(Cascode)Ga N HEMT的出现使得Ga N器件可以在高压场合进行应用。本文首先研究了耗尽型Ga N HEMT及Cascode Ga N HEMT全范围输出伏安特性及其特点。结合Si MOSFET和耗尽型Ga N HEMT的特性,本文重点研究了Cascode Ga N HEMT的工作模态及其条件。最后,给出了500W基于600V Cascode Ga N HEMT单相全桥逆变器的实验验证。实验结果和仿真验证证明了理论分析的正确性。
In recent years with the rapid development of the manufacturing process of Ga N devices, Gallium Nitride high electron mobility transistors（Ga N HEMT） has begun to be applied in the field of power electronics. The appearance of the Cascode Ga N HEMT makes it possible to apply Ga N device in high voltage application. The output volt-ampere characteristics of the depletion mode Ga N HEMT and Cascode Ga N HEMT are investigated in detail, which is important for the operation mode of the Cascode Ga N HEMT. This paper presents the steady-state operation mode for high voltage gallium nitride（Ga N） high-electron-mobility transistors（HEMT） in a Cascode structure. The steadystate analysis is verified by a 500 W single phase DC/AC inverter. Theoretical analysis is verified by simulation and experiment results.
出处
《电工技术学报》
EI
CSCD
北大核心
2015年第14期295-303,共9页
Transactions of China Electrotechnical Society
基金
北京市科技计划课题资助项目(Z141100003114011)
