摘要
在霍尔效应实验中,当通过N型和P型半导体中的电流和外加磁场都不变时,这两类半导体中霍尔电压的方向相反.这一现象一方面可以解释为N型和P型半导体中多数载流子种类不同,分别为带负电的电子和带正电的空穴;另一方面也可以理解为,不管是N型还是P型半导体,参与导电的载流子都是电子,只是因为不同类型的半导体中电子与晶格的相互作用不同,或者说是包含了与晶格相互作用在内的电子的有效质量不同,导致了霍尔电压的反向.
In the Hall effect experiment,if the current and applied magnetic field through N-type and P-type semiconductors are same,the polarity of Hall voltages in N-type and P-type semiconductors are opposite to each other.This phenomenon can be interpreted as the charge carriers,which are electrons and holes respectively,are different in N-type and P-type semi-conductors.On the other hand,it also can be interpreted as the charge carriers in N-type and P-type semiconductors are all electrons.However,the interaction of the electrons and crystal lattice are different,or we can say the effective mass of the electrons are different in these two types of semiconductors,and that leads to the reverse of the Hall voltage.
出处
《物理与工程》
2015年第4期57-59,共3页
Physics and Engineering
关键词
霍尔电压
有效质量
半导体
空穴
Hall voltage
effective mass
semiconductor
hole
