摘要
研究了ITO与n-GaN方阻的大小关系对电流扩展的影响,结果表明,在一定电极图形设计下,当ITO方阻大于n-GaN层方阻时,电流朝P电极附近集中,当ITO方阻小于n-GaN层方阻时,电流朝N电极附近集中,只有在ITO与n-GaN方阻接近时,芯片电流扩展才最佳。
The influence of sheet resistance relation between ITO and n-GaN layers on the current spreading was researched. The result indicated that the current crowding nearby the P-electrode when the sheet resistance of ITO greater than n-GaN layer, the current crowding nearby the N-electrode or N-PAD when the sheet resistance of ITO less than n-GaN layer under a confirm electrode pattern. Current spreading was the best when the sheet resistance of ITO was close to the n-GaN layer .
关键词
发光二极管
方阻
电流扩展
匹配
light-emitting diodes（LED）, sheet resistance, current spreading, matching
