摘要
介绍了一种不含腐蚀抑制剂苯并三氮唑(BTA)和氧化剂的弱碱性阻挡层抛光液。通过测量抛光液的pH值、Zeta电位、黏度、粒径大小及粒径分布随放置时间的变化来研究抛光液的稳定性;该抛光液与商业阻挡层抛光液进行比较,通过测试抛光后的晶圆表面状态,发现该抛光液有利于化学机械抛光(CMP)后清洗;在E460E机台上研究抛光液中各种成分(磨料、FA/O螯合剂)和抛光液pH值对Cu,Ta和SiO2去除速率选择比的影响。实验研究结果表明该弱碱性阻挡层抛光液使用保质期长达一个月以上并且利于CMP后清洗,抛光后的晶圆表面无氧化铜结晶和BTA颗粒。抛光实验结果显示磨料、FA/O螯合剂和pH值对Cu,Ta和SiO2去除速率选择比有不同的影响,其中影响最大的是磨料质量分数。
The weakly alkaline barrier slurry without the corrosion inhibitor benzotriazole（BTA）and oxidizer was introduced.The variations of the pH-value,Zeta potential,viscosity,particle size and particle size distribution with time were tested to study the stability of the slurry.Comparing of the slurry with the commercial barrier slurry,it is found that the weakly alkaline barrier slurry facilitates the post-CMP cleaning by measuring the pattern wafer surface after polishing.The effects of different components（abrasive and FA/O chelating agent）and the pH value of the slurry on the removal rate selectivities of Cu,Ta and SiO2 were studied on the E460 E platform.The experimental results show that the weakly alkaline barrier slurry has the shelf life of at least one month and facilitates the post-CMP cleaning,and the wafer surface without the copper oxide crystal and BTA particles is obtained.The polishing experimental results indicate that the abrasive,FA/O chelating agent and pH value of the slurry have different effects on the removal rate selectivities of Cu,Ta and SiO2,and the biggest effect factor is the mass fraction of the abrasive.
出处
《微纳电子技术》
CAS
北大核心
2015年第10期671-675,共5页
Micronanoelectronic Technology
基金
国家中长期科技发展规划02科技重大专项资助项目(2009ZX02308)
河北省自然科学青年资金资助项目(F2015202267)
