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Ⅲ族氮化物纳米材料的生长技术与相关专利申请现状分析 被引量:1

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摘要 本文针对III族氮化物纳米材料,梳理了其各种制备技术,分析比较了各种制备方法的反应原理、反应条件及获得的产物特性等等,这些制备方法包括液相法、化学气相沉积法、分子束外延法及其他制备方法。此外,本文还进一步分析了III族氮化物纳米材料制备技术的相关专利保护现状,通过对近3年的该技术领域的专利申请情况分析,发现Al N材料多数和基片、陶瓷、薄膜等有关,Ga N材料中专利申请多是二极管、LED、薄膜有关,而In N材料专利申请中,薄膜占了绝大部分。
出处 《中国发明与专利》 2015年第10期77-84,共8页 China Invention & Patent
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参考文献35

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二级参考文献32

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