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Surface-type nonvolatile electric memory elements based on organic-on-organic CuPc-H_2Pc heterojunction

Surface-type nonvolatile electric memory elements based on organic-on-organic CuPc-H_2Pc heterojunction
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摘要 A novel surface-type nonvolatile electric memory elements based on organic semiconductors CuPc and H2Pc are fabricated by vacuum deposition of the CuPc and H2Pc films on preliminary deposited metallic (Ag and Cu) electrodes. The gap between Ag and Cu electrodes is 3040μm. For the current-voltage (I-V) characteristics the memory effect, switching effect, and negative differential resistance regions are observed. The switching mechanism is attributed to the electric-field-induced charge transfer. As a result the device switches from a low to a high-conductivity state and then back to a low conductivity state if the opposite polarity voltage is applied. The ratio of resistance at the high resistance state to that at the low resistance state is equal to 120-150. Under the switching condition, the electric current increases -- 80-100 times. A comparison between the forward and reverse I-V characteristics shows the presence of rectifying behavior. A novel surface-type nonvolatile electric memory elements based on organic semiconductors CuPc and H2Pc are fabricated by vacuum deposition of the CuPc and H2Pc films on preliminary deposited metallic (Ag and Cu) electrodes. The gap between Ag and Cu electrodes is 3040μm. For the current-voltage (I-V) characteristics the memory effect, switching effect, and negative differential resistance regions are observed. The switching mechanism is attributed to the electric-field-induced charge transfer. As a result the device switches from a low to a high-conductivity state and then back to a low conductivity state if the opposite polarity voltage is applied. The ratio of resistance at the high resistance state to that at the low resistance state is equal to 120-150. Under the switching condition, the electric current increases -- 80-100 times. A comparison between the forward and reverse I-V characteristics shows the presence of rectifying behavior.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第11期328-332,共5页 中国物理B(英文版)
基金 supported by the GIK Institute of Engineering Science and Technology,Pakistan and Physical Technical Institute of Academy of Sciences of Tajikistan
关键词 heterojunction nonvolatile memory organic-on-organic CUPC H2Pc heterojunction nonvolatile memory, organic-on-organic, CuPc, H2Pc
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