摘要
利用室温光致荧光谱（PL）研究金属有机物化学气相沉积（MOCVD）方法中温度参数对InP 衬底上生长In0.53Ga0.47As/InP 量子阱材料质量的影响.通过两组实验分别研究并分析了生长温度对In0.53Ga0.47As 层和InP 层材料质量的影响,得到了In0.53Ga0.47As 层和InP 层最佳生长温度分别为650℃和600℃.利用优化条件制备In0.53Ga0.47As/InP基PIN 型探测器,得到器件的暗电流较优化前小2 个数量级.
Room-temperature photoluminescence was used to study the influence of growth temperature on InP/InGaAs quantum well grownon InP substrate by method of metal-organic chemical vapor deposition（MOCVD）.The growth temperature of InGaAs andInP wasstudied and analyzed in two experiments ,and the best growth temperature of InGaAs and InP was found to be 650℃and 600℃respectively. Preparation the material of In0.53Ga0.47As/InP PIN detector using the optimized conditions, the dark current of thedetector is obtained by optimizing before is 2 orders of magnitude less.
基金
受中国国家自然科学基金支持资助（U1037602）.
