期刊文献+

Azimuthal dependence of single-event and multiple-bit upsets in SRAM devices with anisotropic layout 被引量:2

Azimuthal dependence of single-event and multiple-bit upsets in SRAM devices with anisotropic layout
下载PDF
导出
摘要 Experimental evidence is presented showing obvious azimuthal dependence of single event upsets(SEU) and multiple-bit upset(MBU) patterns in radiation hardened by design(RHBD) and MBU-sensitive static random access memories(SRAMs), due to the anisotropic device layouts. Depending on the test devices, a discrepancy from 24.5% to 50% in the SEU cross sections of dual interlock cell(DICE) SRAMs is shown between two perpendicular ion azimuths under the same tilt angle. Significant angular dependence of the SEU data in this kind of design is also observed, which does not fit the inverse-cosine law in the effective LET method. Ion trajectory-oriented MBU patterns are identified, which is also affected by the topological distribution of sensitive volumes. Due to that the sensitive volumes are periodically isolated by the BL/BLB contacts along the Y-axis direction, double-bit upsets along the X-axis become the predominant configuration under normal incidence.Predominant triple-bit upset and quadruple-bit upset patterns are the same under different ion azimuths(Lshaped and square-shaped configurations, respectively). Those results suggest that traditional RPP/IRPP model should be promoted to consider the azimuthal and angular dependence of single event effects in certain designs.During earth-based evaluation of SEE sensitivity, worst case beam direction, i.e., the worst case response, should be revealed to avoid underestimation of the on-orbit error rate. Experimental evidence is presented showing obvious azimuthal dependence of single event upsets(SEU) and multiple-bit upset(MBU) patterns in radiation hardened by design(RHBD) and MBU-sensitive static random access memories(SRAMs), due to the anisotropic device layouts. Depending on the test devices, a discrepancy from 24.5% to 50% in the SEU cross sections of dual interlock cell(DICE) SRAMs is shown between two perpendicular ion azimuths under the same tilt angle. Significant angular dependence of the SEU data in this kind of design is also observed, which does not fit the inverse-cosine law in the effective LET method. Ion trajectory-oriented MBU patterns are identified, which is also affected by the topological distribution of sensitive volumes. Due to that the sensitive volumes are periodically isolated by the BL/BLB contacts along the Y-axis direction, double-bit upsets along the X-axis become the predominant configuration under normal incidence.Predominant triple-bit upset and quadruple-bit upset patterns are the same under different ion azimuths(Lshaped and square-shaped configurations, respectively). Those results suggest that traditional RPP/IRPP model should be promoted to consider the azimuthal and angular dependence of single event effects in certain designs.During earth-based evaluation of SEE sensitivity, worst case beam direction, i.e., the worst case response, should be revealed to avoid underestimation of the on-orbit error rate.
出处 《Nuclear Science and Techniques》 SCIE CAS CSCD 2015年第5期69-75,共7页 核技术(英文)
基金 Supported by National Natural Science Foundation of China(Nos.11179003,10975164,61204112 and 61204116) China Postdoctoral Science Foundation(No.2014M552170)
关键词 SRAM 各向异性 方位角 单事件 翻转 静态随机存取存储器 器件 设计模式 Azimuth Dual interlocked cell Multiple-bit upset Single event upset
  • 相关文献

参考文献21

  • 1Dodd P E, Shaneyfelt M R, Schwank J R, et al. Current and future challenges in radiation effects on CMOS elec- tronics. IEEE T Nucl Sci, 2010, 57: 1747-1763. DOI: I 0. I 109/TNS.2010.2042613.
  • 2Tong T, Wang X H, Zhang Z G, et al. Effectiveness and fail- ure modes of error correcting code in industrial 65 nm CMOS SRAMs exposed to heavy ions. Nucl Sci Tech, 2014, 25: 010405. DOI: 10.13538/j. 1001-8042/nst.25.010405.
  • 3Raine M, Gaillardin M, Paillet P, et al. Angular dependence of SOI transistor response to heavy ion irradiation. IEEE T Nucl Sci, 2010, 57: 3219-3227. DOI: 10.1109/TNS.2010.2077309.
  • 4Pickel J C and Blandford J T. Cosmic-ray-induced errors in MOS devices. IEEE T Nucl Sci, 1980, 27: 1006-1015. DOI: 10.1109/TNS. 1980.4330967.
  • 5Petersen E, Langworthy J and Diehl S. Suggested single event upset figure of merit. IEEE T Nucl Sci, 1983, 30: 4533-4539. DOI: 10.1109/TNS.1983.4333166.
  • 6CRIME site. https://creme.isde.vanderbilt.edu/.
  • 7EIA/JESD57: Test procedure for the measurement of single- event effects in semiconductor devices from heavy ion irradia- tion, 1996.
  • 8Petersen E L. Single event analysis and prediction. IEEE Nu- clear and Space Radiation Effects Conference Short Course. Tucson, A Z, July, 2008.
  • 9Weller R A, Mendenhall M H, Reed R A, et al. Monte Carlo simulation of single event effects. IEEE T Nucl Sci, 2010, 57: 1726-1746. DOI: 10.1109/TNS.2010.2044807.
  • 10Calin T, Nicolaidis M and Velazco R. Upset hardened mem- ory design for submicron CMOS technology. IEEE T Nucl Sci, 1996, 43: 2874-2878. DOI: 10.1109/23.556880.

同被引文献9

引证文献2

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部