摘要
利用射频磁控溅射法在n型Si(100)衬底上沉积六方氮化硼薄膜(h-BN),采用AFM、Raman、XPS、FTIR等技术研究负偏压对所沉积薄膜生长模式、结构、表面粗糙度、薄膜取向、相变等特性的影响。结果表明,当负偏压为0V时,沉积所得h-BN薄膜表面粗糙度较低、结晶性良好、c轴垂直于衬底且以层状模式生长;随着负偏压的增加,薄膜由层状模式生长转变为岛状模式生长,表面粗糙度增加,且h-BN经亚稳相E-BN和wBN向c-BN转变,使得BN薄膜相系统更加混乱,不利于高质量层状h-BN薄膜的获取。
Hexagonal boron nitride(h-BN)thin films were deposited on the surface of n-type Si(100)substrates by radio frequency(RF)sputtering method.The effects of negative bias on the characteristics of deposited thin fim,such as growth mode,structure,surface roughness,film orientation and phase transition were studied by means of AFM,Raman,XPS and FTIR.The results show that hBN thin films with relative low surface roughness,good crystallinity,c axis normal to the substrate and layer-by-layer growth mode are produced at a negative bias of 0V.With the enhancement of negative bias,the growth of thin film changes from layer-by-layer mode to island mode along with the increase of its surface roughness.High negative bias also induces the transformation of h-BN from metastable E-BN and w-BN phase to c-BN phase,which leads to the chaos of BN phase system and is unfavorable for the deposition of high quality h-BN layer thin film.
出处
《武汉科技大学学报》
CAS
北大核心
2015年第5期351-356,共6页
Journal of Wuhan University of Science and Technology
基金
湖北省自然科学基金资助项目(2014CFB798)
中国科学院纳米器件与应用重点实验室开放课题(15QT02)
关键词
六方氮化硼
薄膜
沉积
SI衬底
射频磁控溅射
负偏压
生长模式
粗糙度
相变
hexagonal boron nitride
thin film
deposition
Si substrate
RF magnetron sputtering
negative bias
growth mode
surface roughness
phase transition
