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Variation of efficiency droop with quantum well thickness in In GaN/GaN green light-emitting diode

Variation of efficiency droop with quantum well thickness in In GaN/GaN green light-emitting diode
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摘要 In GaN/GaN multiple quantum well(MQW) green light-emitting diodes(LEDs) with varying In GaN quantum well layer thickness are fabricated and characterized. The investigation of luminescence efficiency versus injection current reveals that several physical mechanisms may jointly influence the efficiency droop, resulting in a non-monotonic variation of droop behavior with increasing quantum well(QW) thickness. When the QW is very thin, the increase of In GaN well layer thickness makes the efficiency droop more serious due to the enhancement of polarization effect. When the QW thickness increases further, however, the droop is alleviated significantly, which is mainly ascribed to the enhanced nonradiative recombination process and the weak delocalization effect. In GaN/GaN multiple quantum well(MQW) green light-emitting diodes(LEDs) with varying In GaN quantum well layer thickness are fabricated and characterized. The investigation of luminescence efficiency versus injection current reveals that several physical mechanisms may jointly influence the efficiency droop, resulting in a non-monotonic variation of droop behavior with increasing quantum well(QW) thickness. When the QW is very thin, the increase of In GaN well layer thickness makes the efficiency droop more serious due to the enhancement of polarization effect. When the QW thickness increases further, however, the droop is alleviated significantly, which is mainly ascribed to the enhanced nonradiative recombination process and the weak delocalization effect.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第12期572-577,共6页 中国物理B(英文版)
基金 Project supported by the National Natural Science Foundation of China(Grant Nos.61574135 61574134 61474142 61474110 61377020 61376089 61223005 and 61321063) the One-Hundred Person Project of the Chinese Academy of Sciences the Basic Research Project of Jiangsu Province China(Grant No.BK20130362) the Scientific Research Fund of Chongqing Municipal Education Commission China(Grant No.KJ131206) the Natural Science Foundation of Chongqing Municipal Science and Technology Commission China(Grant No.cstc2012jj A50036)
关键词 InGaN/GaN multiple quantum wells light-emitting diode efficiency droop well thickness InGaN/GaN multiple quantum wells,light-emitting diode,efficiency droop,well thickness
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